Conference paper
300 mm SGOI/strain-Si for high-performance CMOS
A. Reznicek, S.W. Bedell, et al.
IEEE International SOI Conference 2004
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
A. Reznicek, S.W. Bedell, et al.
IEEE International SOI Conference 2004
T.J. De Lyon, J. Woodall, et al.
Applied Physics Letters
A. Ajmera, J. Sleight, et al.
VLSI Technology 1999
M.D. Pashley, K.W. Haberern, et al.
Physical Review Letters