P.D. Kirchner, J. Woodall, et al.
Applied Physics Letters
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
P.D. Kirchner, J. Woodall, et al.
Applied Physics Letters
H.J. Hovel, R.T. Hodgson, et al.
IEEE T-ED
J. Woodall, H.J. Hovel
Applied Physics Letters
B. Davari, H.J. Hovel, et al.
IEEE International SOI Conference 1993