H. Shen, S.H. Pan, et al.
Applied Physics Letters
Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (≳1 μ) instead of shallow and by "leaching" both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 μ.
H. Shen, S.H. Pan, et al.
Applied Physics Letters
H.J. Hovel, R.T. Hodgson, et al.
IEEE T-ED
D. Yan, Fred H. Pollak, et al.
Applied Physics Letters
R.M. Feenstra, A. Vaterlaus, et al.
Applied Physics Letters