Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years. © 2006 Elsevier Ltd. All rights reserved.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta