Challenges and opportunities for high performance 32 nm CMOS technology
- J. Sleight
- I. Lauer
- et al.
- 2006
- IEDM 2006
Conference paper
Publications
17 results for Dinkar Singh
Transistor scaling with novel materials
- Meikei Ieong
- Vijay Narayanan
- et al.
- 2006
- Materials Today
PaperEffect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
PaperStrained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths
- D. Singh
- Keith A. Jenkins
- et al.
- 2006
- IEEE Electron Device Letters
PaperEffect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
Conference paperStress memorization in high-performance FDSOI devices with ultra-thin silicon channels and 25nm gate lengths
- D. Singh
- J. Sleight
- et al.
- 2005
- IEDM 2005
Conference paperDirect measurements of frequency response of carbon nanotube field effect transistors
- D. Singh
- Keith A. Jenkins
- et al.
- 2005
- Electronics Letters
PaperUltra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs
- D. Singh
- P. Solomon
- et al.
- 2004
- IEDM 2004
Conference paperDirect measurements of the AC performance of carbon nanotube field effect transistors
- D. Singh
- Keith A. Jenkins
- 2004
- DRC 2004
Conference paperPerformance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Conference paper