IEEE Transactions on Electron Devices

Paper

01 Jan 1993

VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics

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Abstract

No abstract available.

Paper

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M.R. Melloch, N. Otsuka, et al.

Applied Physics Letters

Paper

GaAs buffer layers grown at low substrate temperatures using As₂ and the formation of arsenic precipitates

M.R. Melloch, K. Mahalingam, et al.

Journal of Crystal Growth

Paper

High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

R.J. Matyi, M.R. Melloch, et al.

Applied Physics Letters

Conference paper

InAs bipolar transistors: A path to high-performance cryogenic electronics

P.E. Dodd, M.R. Melloch, et al.

Device Research Conference 1993

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