IEEE Transactions on Electron Devices

Paper

01 Jan 1993

VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics

View publication

Abstract

No abstract available.

Paper

High-density optical storage based on nanometer-size arsenic clusters in low-temperature-growth GaAs

D.D. Nolte, M.R. Melloch, et al.

Applied Physics Letters

Conference paper

InAs bipolar transistors: A path to high-performance cryogenic electronics

P.E. Dodd, M.R. Melloch, et al.

Device Research Conference 1993

Paper

Comparative study of minority electron properties in p⁺-GaAs doped with beryllium and carbon

M.L. Lovejoy, M.R. Melloch, et al.

Applied Physics Letters

Paper

GaAs buffer layers grown at low substrate temperatures using As₂ and the formation of arsenic precipitates

M.R. Melloch, K. Mahalingam, et al.

Journal of Crystal Growth

View all publications