Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
Paper
Publications
34 results for M.R. Melloch
Low-temperature grown III-V materials
- M.R. Melloch
- J. Woodall
- et al.
- 1995
- Annual Review of Materials Science
PaperThermal velocity limits to diffusive electron transport in thin-base np+n GaAs bipolar transistors
- E.S. Harmon
- M.R. Melloch
- et al.
- 1994
- Applied Physics Letters
PaperGaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites
- M.R. Melloch
- J. Woodall
- et al.
- 1993
- Materials Science and Engineering B
PaperHigh transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contacts
- C.L. Lin
- M.O. Aboelfotoh
- et al.
- 1993
- IEDM 1993
Conference paperPrecipitation of arsenic in doped GaAs
- C.L. Chang
- K. Mahalingam
- et al.
- 1993
- Journal of Electronic Materials
PaperExperimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs
- E.S. Harmon
- M.L. Lovejoy
- et al.
- 1993
- Applied Physics Letters
PaperEnhanced electro-optic properties of low-temperature-growth GaAs and AlGaAs
- D.D. Nolte
- M.R. Melloch
- et al.
- 1993
- Applied Physics Letters
PaperPhotoemission spectroscopy of Al0.27Ga0.73As:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1993
- Applied Physics Letters
PaperInAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
Conference paper