Tunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gain
- M. Heiblum
- D.C. Thomas
- et al.
- 1985
- Applied Physics Letters
Paper
Publications
71 results for Mordehai Heiblum
Energy band discontinuities in heterojunctions measured by internal photoemission
- M. Heiblum
- M.I. Nathan
- et al.
- 1985
- Applied Physics Letters
PaperVA-1 Measuring Barrier Heights in GaAs-AlGaAs and Metal-AlGaAs Junctions by Internal Photoemission
- M. Heiblum
- M.I. Nathan
- et al.
- 1985
- IEEE T-ED
PaperGrowth of molybdenum and tungsten on GaAs in a molecular beam epitaxy system
- J. Bloch
- M. Heiblum
- et al.
- 1985
- Applied Physics Letters
PaperElectron-gun Evaporators of Refractory Metals Compatible with Molecular Beam Epitaxy
- M. Heiblum
- J. Bloch
- et al.
- 1985
- JVSTA
PaperFractionally quantized Hall effect in two-dimensional systems of extreme electron concentration
- E. Mendez
- L.L. Chang
- et al.
- 1984
- Physical Review B
PaperHigh mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions
- M. Heiblum
- E. Mendez
- et al.
- 1984
- Applied Physics Letters
PaperTemperature dependence of the electron mobility in GaAs-GaAlAs heterostructures
- E. Mendez
- P.J. Price
- et al.
- 1984
- Applied Physics Letters
PaperPhotoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy
- E. Mendez
- M. Heiblum
- et al.
- 1983
- Journal of Applied Physics
PaperHeavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
- M. Heiblum
- W.I. Wang
- et al.
- 1983
- Journal of Applied Physics
Paper