Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon
- T.Y. Tan
- U. Gösele
- 1982
- Applied Physics Letters
Paper
Publications
18 results for U. Gösele
Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound
- T.Y. Tan
- U. Gösele
- 1982
- Journal of Applied Physics
PaperGrowth kinetics of planar binary diffusion couples: "Thin-film case" versus "bulk cases"
- U. Gösele
- K.N. Tu
- 1982
- Journal of Applied Physics
PaperA simple analysis of inert marker motion in a single compound layer for solid-phase epitaxy and for binary diffusion couples
- U. Gösele
- K.N. Tu
- et al.
- 1982
- Journal of Applied Physics
PaperOxygen diffusion and thermal donor formation in silicon
- U. Gösele
- T.Y. Tan
- 1982
- Applied Physics A Solids and Surfaces
PaperDiffusion of gold in silicon: A new model
- U. Gösele
- F.F. Morehead
- et al.
- 1981
- Applied Physics Letters
PaperDiffusion of zinc in gallium arsenide: A new model
- U. Gösele
- F.F. Morehead
- 1981
- Journal of Applied Physics
PaperGrowth kinetics of oxidation-induced stacking faults in silicon: A new concept
- T.Y. Tan
- U. Gösele
- 1981
- Applied Physics Letters
Paper