Nanowire-based one-dimensional electronics
- C. Thelander
- P. Agarwal
- et al.
- 2006
- Materials Today
Paper
Publications
18 results for U. Gösele
Realization of a silicon nanowire vertical surround-gate field-effect transistor
- Volker Schmidt
- Heike Riel
- et al.
- 2005
- Small
PaperTransfer of semiconductor and oxide films by wafer bonding and layer cutting
- Qin-Yi Tong
- Li-Juan Huang
- et al.
- 2000
- Journal of Electronic Materials
PaperMetastability in slow thin-film reactions
- K.N. Tu
- S.R. Herd
- et al.
- 1991
- Physical Review B
Paper"Critical thickness" of amorphous phase formation in binary diffusion couples
- U. Gösele
- K.N. Tu
- 1989
- Journal of Applied Physics
PaperPoint defects, diffusion processes, and swirl defect formation in silicon
- T.Y. Tan
- U. Gösele
- 1985
- Applied Physics A Solids and Surfaces
PaperPOINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.
- T.Y. Tan
- U. Gosele
- 1983
- ECS Meeting 1983
Conference paperSelf-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon
- F.F. Morehead
- N.A. Stolwijk
- et al.
- 1983
- Applied Physics Letters
PaperIntermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system
- K.N. Tu
- G. Ottaviani
- et al.
- 1983
- Journal of Applied Physics
PaperOn the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon
- T.Y. Tan
- U. Gösele
- et al.
- 1983
- Applied Physics A Solids and Surfaces
Paper