Epitaxial Growth and Selectivity of AlxGa1-xAs Using Novel Metalorganic Precursors
- M.S. Goorsky
- T.F. Kuech
- et al.
- 2019
- JES
Paper
Publications
88 results for T.F. Kuech
A Study of silicon incorporation in GaAs MOCVD Layers
- E. Veuhoff
- T.F. Kuech
- et al.
- 2019
- JES
PaperAn investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system
- L.C. Wang
- B. Zhang
- et al.
- 2011
- Journal of Materials Research
PaperVapor Pressure and Vapor Composition of Diethylgallium Chloride and Diethylaluminum Chloride
- Nicholas I. Buchan
- Robert M. Potemski
- et al.
- 2002
- Journal of Chemical and Engineering Data
PaperComparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor-phase epitaxy GaAs/Al xGa1-xAs structures
- D.J. Wolford
- G.D. Gilliland
- et al.
- 1994
- Applied Physics Letters
PaperFilm stress of sputtered W/C multilayers and strain relaxation upon annealing
- J.F. Geisz
- T.F. Kuech
- et al.
- 1994
- Journal of Applied Physics
PaperAlkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1-xAs growth
- J.W. Huang
- D.F. Gaines
- et al.
- 1994
- Journal of Electronic Materials
PaperLuminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1994
- Physical Review B
PaperTemperature-dependent radiative recombination of free excitons in high-quality GaAs heterostructures
- H.P. Hjalmarson
- G.D. Gilliland
- et al.
- 1994
- Journal of Luminescence
PaperMinority-carrier recombination kinetics and transport in]] surface-free" GaAs/AlxGa1-xAs double heterostructures
- G.D. Gilliland
- D.J. Wolford
- et al.
- 1993
- Journal of Applied Physics
Paper