Physical compact model for threshold voltage in short-channel double-gate devices
- Keunwoo Kim
- J.G. Fossum
- et al.
- 2003
- SISPAD 2003
Conference paper
Publications
136 results for C.T. Chuang
Oxide breakdown model and its impact on SRAM cell functionality
- R. Rodríguez
- R.V. Joshi
- et al.
- 2003
- SISPAD 2003
Conference paperInfluence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
Conference paperStrained-Si devices and circuits for low-power applications
- Keunwoo Kim
- R.V. Joshi
- et al.
- 2003
- ISLPED 2003
Conference paperStrained-Si Devices and Circuits for Low-Power Applications
- Keunwoo Kim
- Rajiv V. Joshi
- et al.
- 2003
- ISLPED 2003
Conference paperPerformance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2002
- IEEE International SOI Conference 2002
Conference paperSOI-optimized 64-bit high-speed CMOS adder design
- Jae-Joon Kim
- Rajiv Joshi
- et al.
- 2002
- VLSI Circuits 2002
Conference paperHigh performance low power VT- wave-pipeline CMOS circuit in PD/SOI technology
- R.V. Joshi
- F. Yee
- et al.
- 2002
- IEEE International SOI Conference 2002
Conference paperPerformance analysis of tapered gate in PD/SOI CMOS technology
- W. Hwang
- C.T. Chuang
- et al.
- 2002
- International Journal of Electronics
PaperAnalysis of the effect of the gate oxide breakdown on SRAM stability
- R. Rodríguez
- J.H. Stathis
- et al.
- 2002
- Microelectronics Reliability
Conference paper