Resonant Raman scattering in GaAs-Ga1-xAlxAs quantum wells in an electric field
- C. Tejedor
- J.M. Calleja
- et al.
- 1987
- Physical Review B
Paper
Publications
20 results for L. Vina
Electronic properties of quantum wells in perturbing fields
- R.T. Collins
- L. Vina
- et al.
- 1989
- Proceedings of SPIE 1989
Conference paperMixing between heavy-hole and light-hole excitons in GaAs/AlxGa1-xAs quantum wells in an electric field
- R.T. Collins
- L. Vina
- et al.
- 1987
- Physical Review B
PaperExcitonic coupling in GaAs/GaAlAs quantum wells in an electric field
- L. Via
- R.T. Collins
- et al.
- 1987
- Physical Review Letters
PaperOptical spectroscopy of GaAs GaAlAs quantum wells under an external electric field
- L. Viña
- R.T. Collins
- et al.
- 1987
- Superlattices and Microstructures
PaperExcitonic transitions and optically excited transport in GaAs AlxGa1-xAs quantum wells in an electric field
- R.T. Collins
- L. Viña
- et al.
- 1987
- Superlattices and Microstructures
PaperInterference effects of Raman scattering by Lo-phonons near the Eo+Δo-GAP studied on (113), (111), and (111) faces of GaAs
- W. Kauschke
- V. Vorlicek
- et al.
- 1987
- Solid State Communications
PaperAlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy
- L. Vina
- W.I. Wang
- 1986
- Applied Physics Letters
PaperHigh-purity GaAs grown by molecular-beam epitaxy
- W.I. Wang
- R.F. Marks
- et al.
- 1986
- Journal of Applied Physics
PaperComparative study of the effect of an electric field on the photocurrent and photoluminescence of GaAs-GaAlAs quantum wells
- L. Via
- R.T. Collins
- et al.
- 1986
- Physical Review B
Paper