High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing
- M. Chudzik
- B. Doris
- et al.
- 2007
- VLSI Technology 2007
Conference paper
Publications
68 results for Bruce Doris
Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters
PaperA comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Conference paperMobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI
- Huiling Shang
- J. Rubino
- et al.
- 2005
- VLSI Technology 2005
Conference paperHigh performance FDSOI CMOS technology with metal gate and high-k
- Bruce Doris
- Y.-H. Kim
- et al.
- 2005
- VLSI Technology 2005
Conference paperUltra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack
- B. Doris
- B.P. Linder
- et al.
- 2005
- VLSI-TSA 2005
Conference paperOn the scalability and carrier transport of advanced CMOS devices
- Meikei Ieong
- Leland Chang
- et al.
- 2005
- ICICDT 2005
Conference paperSilicon device scaling to the sub-10-nm regime
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- Science
ReviewScaling beyond conventional CMOS device
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- ICSICT 2004
Conference paper