Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
- Kathy Boucart
- Adrian M. Ionescu
- et al.
- 2009
- ESSDERC 2009
Conference paper
Publications
62 results for W. Riess
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- Applied Physics Letters
PaperMapping active dopants in single silicon nanowires using off-axis electron holography
- Martien I. Den Hertog
- Heinz Schmid
- et al.
- 2009
- Nano Letters
PaperInterface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- ULIS 2009
Conference paperLateral strain profile as key technology booster for all-silicon tunnel FETs
- Kathy Boucart
- Adrian Mihai Ionescu
- et al.
- 2009
- IEEE Electron Device Letters
PaperDonor deactivation in silicon nanostructures
- Mikael T. Björk
- Heinz Schmid
- et al.
- 2009
- Nature Nanotechnology
PaperDoping limits of grown in situ doped silicon nanowires using phosphine
- Heinz Schmid
- Mikael T. Björk
- et al.
- 2009
- Nano Letters
PaperToward nanowire electronics
- Joerg Appenzeller
- Joachim Knoch
- et al.
- 2008
- IEEE T-ED
PaperSilicon nanowire tunneling field-effect transistors
- M.T. Björk
- J. Knoch
- et al.
- 2008
- Applied Physics Letters
PaperOutperforming the conventional scaling rules in the quantum-capacitance limit
- J. Knoch
- W. Riess
- et al.
- 2008
- IEEE Electron Device Letters
Paper