Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
- Chun Wing Yeung
- Jingyun Zhang
- et al.
- 2018
- IEDM 2018
Conference paper
Publications
22 results for X. Miao
Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics
- Sufi Zafar
- Christopher P. D’Emic
- et al.
- 2018
- ACS Nano
PaperAccurate performance evaluation for the horizontal nanosheet standard-cell design space beyond 7nm technology
- Yoo-Mi Lee
- Myung-Hee Na
- et al.
- 2017
- IEDM 2017
Conference paperA comparative study of strain and Ge content in Si1-xGex channel using planar FETs, FinFETs, and strained relaxed buffer layer FinFETs
- Choonghyun Lee
- Shogo Mochizuki
- et al.
- 2017
- IEDM 2017
Conference paperFirst-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
- H. Dixit
- Chengyu Niu
- et al.
- 2017
- IEEE T-ED
PaperStacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
Conference paperHot carrier reliability in ultra-scaled sige channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2017
- ASICON 2017
Conference paperHot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2016
- IEDM 2016
Conference paperA 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Conference paperFinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys
- Oleg Gluschenkov
- Zuoguang Liu
- et al.
- 2016
- IEDM 2016
Conference paper