On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
Paper
Publications
24 results for Alvin Joseph
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T/fMAX of 15/14 GHz VPNP, and fT/f MAX of 60/125 GHz HBT
- P. Candra
- M. Dahlström
- et al.
- 2008
- BCTM 2008
Conference paper3D integration techniques applied to SiGe power amplifiers
- Ramana Malladi
- Alvin Joseph
- et al.
- 2008
- ECS Meeting 2008
Conference paperOn the frequency limits of SiGe HBTs for TeraHertz applications
- Yuan Jiahui
- Ram Krithivasan
- et al.
- 2007
- BCTM 2007
Conference paperA 0.35 μm SiGe BiCMOS technology for power amplifier applications
- Alvin Joseph
- Qizhi Liu
- et al.
- 2007
- BCTM 2007
Conference paperAn investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures
- Jiahui Yuan
- John D. Cressler
- et al.
- 2007
- IEEE Transactions on Electron Devices
PaperP-i-n diodes for monolithic millimetre wave BiCMOS applications
- Bradley A. Orner
- Qizhi Liu
- et al.
- 2006
- Semiconductor Science and Technology
PaperSilicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systems
- B.P. Gaucher
- B. Floyd
- et al.
- 2006
- Semiconductor Science and Technology
PaperSiGe BiCMOS trends - today and tomorrow
- J. Dunn
- D.L. Harame
- et al.
- 2006
- CICC 2006
Conference paperA BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
- B. Orner
- M. Dahlström
- et al.
- 2006
- BCTM 2006
Conference paper