Selective epitaxial channel ground plane thin SOI CMOS devices
- Zhibin Ren
- M. Ieong
- et al.
- 2005
- IEDM 2005
Conference paper
Publications
27 results for Omer H. Dokumaci
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Conference paperRetardation of arsenic diffusion in silicon-germanium by co-implantation
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 2004
- ECS Meeting 2004
Conference paperA Simplified Hybrid Orientation Technology (SHOT) for high performance CMOS
- B. Doris
- Y. Zhang
- et al.
- 2004
- VLSI Technology 2004
Conference paperUniversal tunneling behavior in technologically relevant P/N junction diodes
- Paul M. Solomon
- Jason Jopling
- et al.
- 2004
- Journal of Applied Physics
PaperTunnel Current Measurements on P/N Junction Diodes and Implications for Future Device Design
- Paul M. Solomon
- David J. Frank
- et al.
- 2003
- IEDM 2003
Conference paperTwo gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
PaperExtreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Conference paperExamination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Conference paperModeling of the diffusion of implanted boron in strained Si/Si1-xGex
- Huilong Zhu
- Kam-Leung Lee
- et al.
- 2002
- SISPAD 2002
Conference paper