Stable SRAM cell design for the 32 nm node and beyond
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- 2005
- VLSI Technology 2005
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43 results for K.W. Guarini
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
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- 2005
- IEEE International SOI Conference 2005
Conference paperUltra-thin SOI replacement gate CMOS with ALD TaN / high-k gate stack
- B. Doris
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- VLSI-TSA 2005
Conference paperEnabling technologies for wafer-level bonding of 3D MEMS and integrated circuit structures
- Anna W. Topol
- Bruce K. Furman
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- 2004
- ECTC 2004
Conference paperAggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
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- 2004
- IEDM 2004
Conference paperSelectively formed high mobility strained Ge PMOSFETs for high performance CMOS
- Hulling Shang
- Jack O. Chu
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- 2004
- IEDM 2004
Conference paperFabrication, device design and mobility enhancement of germanium channel MOSFETs
- Huiling Shang
- E. Gousev
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- 2004
- ICSICT 2004
Conference paperHigh-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors
- Charles T. Black
- Kathryn W. Guarini
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- 2004
- IEEE Electron Device Letters
PaperChannel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
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- 2004
- VLSI Technology 2004
Conference paperGrowth of silicon oxide in thin film block copolymer scaffolds
- Dong Ha Kim
- Xinqiao Jia
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- 2004
- Advanced Materials
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