Impact of surface preparation for n-type Si:P and p-type SiGe:B semiconductors on low resistance silicide contacts
- A. Carr
- B. Peethala
- et al.
- 2017
- Microelectronic Engineering
Paper
Publications
25 results for Mark Raymond
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Conference paperTechnology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
Conference paperSub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
- Hiroaki Niimi
- Zuoguang Liu
- et al.
- 2016
- IEEE Electron Device Letters
PaperTungsten and cobalt metallization: A material study for MOL local interconnects
- Vimal Kamineni
- Mark Raymond
- et al.
- 2016
- IITC/AMC 2016
Conference paperFormation and microstructure of thin Ti silicide films for advanced technologies
- Praneet Adusumilli
- A. Carr
- et al.
- 2016
- IITC/AMC 2016
Conference paperCompositional dependence of the optical conductivity of Ni1 - XPtx alloys (0 < x < 0.25) determined by spectroscopic ellipsometry
- Lina S. Abdallah
- Stefan Zollner
- et al.
- 2014
- Thin Solid Films
PaperOptical conductivity of Ni1-xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry
- Lina S. Abdallah
- Stefan Zollner
- et al.
- 2014
- JVSTB
PaperOptical conductivity of Ni1- XPtx alloys (0< x <0.25) from 0.76 to 6.6 eV
- Lina S. Abdallah
- Tarek M. Tawalbeh
- et al.
- 2014
- AIP Advances
PaperUltra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
Paper