Oleg Gluschenkov, Heng Wu, et al.
IEDM 2018
Paper
Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
Abstract
We report record low 8.4 × 10-10Ω-cm2 n-type S/D contact resistivity with laser-induced solid/liquid phase epitaxy of Si
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