First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
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- et al.
- 2017
- IEEE T-ED
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Publications
7 results for Jody Fronheiser
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
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- 2016
- IEDM 2016
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- Pietro Montanini
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- 2016
- IEDM 2016
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- Oleg Gluschenkov
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- 2016
- IEDM 2016
Conference paperSub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology
- Hiroaki Niimi
- Zuoguang Liu
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- 2016
- IEEE Electron Device Letters
PaperSelective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application
- Choonghyun Lee
- H. Kim
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- 2016
- VLSI Technology 2016
Conference paperFINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
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- 2016
- VLSI Technology 2016
Conference paper