Influence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
Conference paper
Publications
169 results for James Stathis
Reliability of ultra-thin oxides in CMOS circuits
- J.H. Stathis
- B.P. Linder
- et al.
- 2003
- Microelectronics Reliability
Conference paperCircuit implications of gate oxide breakdown
- J.H. Stathis
- R. Rodríguez
- et al.
- 2003
- Microelectronics Reliability
Conference paperGrowth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paperModeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paperBreakdown transients in ultrathin gate oxides: Transition in the degradation rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
PaperBreakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
- S. Lombardo
- J.H. Stathis
- et al.
- 2003
- Physical Review Letters
PaperGrowth and scaling of oxide conduction after breakdown
- Barry P. Linder
- James H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paperModeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paperA model for gate-oxide breakdown in CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IEEE Electron Device Letters
Paper