Photoinduced hydrogen loss from porous silicon
- R.T. Collins
- M.A. Tischler
- et al.
- 1992
- Applied Physics Letters
Paper
Publications
169 results for James Stathis
Identification of an interface defect generated by hot electrons in SiO2
- J.H. Stathis
- D.J. Dimaria
- 1992
- Applied Physics Letters
PaperModerate-temperature anneal of 7-nm thermal SiO2 in O 2- and H2O-free atmosphere: Effects on Si-SiO2 interface-trap distribution
- L. Dori
- J.H. Stathis
- et al.
- 1991
- Journal of Applied Physics
PaperTrapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on silicon
- D.J. DiMaria
- J.H. Stathis
- 1991
- Journal of Applied Physics
PaperFundamental chemical differences among Pb defects on (111) and (100) silicon
- J.H. Stathis
- L. Dori
- 1991
- Applied Physics Letters
PaperResponse to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1991
- Applied Physics Letters
ReviewOxygen interaction with defects at the Si/SiO2 interface
- J.H. Stathis
- S. Rigo
- et al.
- 1991
- Solid State Communications
PaperTrapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1990
- Applied Physics Letters
PaperE' centers and nitrogen-related defects in SiO2 films
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1990
- Applied Physics Letters
PaperLaser conditioning and electronic defects of HfO2and SiO2thin films
- M.R. Kozlowski
- M. Staggs
- et al.
- 1990
- SPIE Laser-Induced Damage in Optical Materials 1990
Conference paper