Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- J. Martín-Martínez
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
Paper
Publications
12 results for R. Rodríguez
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
- E. Amat
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
PaperEffect and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- INFOS 2003
Conference paperOxide breakdown model and its impact on SRAM cell functionality
- R. Rodríguez
- R.V. Joshi
- et al.
- 2003
- SISPAD 2003
Conference paperInfluence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
Conference paperReliability of ultra-thin oxides in CMOS circuits
- J.H. Stathis
- B.P. Linder
- et al.
- 2003
- Microelectronics Reliability
Conference paperCircuit implications of gate oxide breakdown
- J.H. Stathis
- R. Rodríguez
- et al.
- 2003
- Microelectronics Reliability
Conference paperModeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paperModeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Conference paperA model for gate-oxide breakdown in CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IEEE Electron Device Letters
Paper