Exploring the Limits of Cobalt Liner Thickness in Advanced Copper Interconnects
- Nicholas A. Lanzillo
- Kisik Choi
- et al.
- 2019
- IEEE Electron Device Letters
Paper
Publications
21 results for J. Maniscalco
Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration
- P. Bhosale
- J. Maniscalco
- et al.
- 2018
- IITC 2018
Conference paperImpact of Liner Metals on Copper Resistivity at beyond 7nm Dimensions
- H. Huang
- Nicholas A. Lanzillo
- et al.
- 2018
- IITC 2018
Conference paperRu Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and beyond
- Koichi Motoyama
- O. Van Der Straten
- et al.
- 2018
- IITC 2018
Conference paperComparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Conference paperCobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
- Takeshi Nogami
- Raghuveer Patlolla
- et al.
- 2017
- IITC 2017
Conference paperPre-liner dielectric nitridation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2016
- IITC/AMC 2016
Conference paperALD and PVD tantalum nitride barrier resistivity and their significance in via resistance trends
- O. Van Der Straten
- X. Zhang
- et al.
- 2014
- ECSSMEQ 2014
Conference paperPVD Cu reflow seed process optimization for defect reduction in nanoscale Cu/Low-k dual damascene interconnects
- K. Motoyama
- O. Van Der Straten
- et al.
- 2013
- JES
PaperCVD-Co/Cu(Mn) integration and reliability for 10 nm node
- Takeshi Nogami
- M. He
- et al.
- 2013
- IITC 2013
Conference paper