Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers
- Patrick Fay
- Mohamed Arafa
- et al.
- 1997
- Journal of Lightwave Technology
Paper
Publications
10 results for M. Arafa
Integrated enhancement- and depletion-mode FET's in modulation-doped Si/SiGe heterostructures
- K. Ismail
- J.O. Chu
- et al.
- 1997
- IEEE Electron Device Letters
PaperSubmicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- I. Adesida
- M. Arafa
- et al.
- 1997
- Microelectronic Engineering
PaperA 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- M. Arafa
- K. Ismail
- et al.
- 1996
- IEEE Electron Device Letters
PaperDC and RF performance of 0.25 μm p-type SiGe MODFET
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
PaperHigh speed p-type SiGe modulation-doped field-effect transistors
- M. Arafa
- P. Fay
- et al.
- 1996
- IEEE Electron Device Letters
PaperHigh-transconductance p-type SiGe modulation-doped field-effect transistor
- M. Arafa
- P. Fay
- et al.
- 1995
- Electronics Letters
PaperGated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
PaperExtremely high electron mobility in Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
PaperIdentification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
- K. Ismail
- F. Legoues
- et al.
- 1994
- Physical Review Letters
Paper