Materials challenges for III-V/Si co-integrated CMOS
- Devendra Sadana
- Cheng-Wei Cheng
- et al.
- 2015
- CICC 2015
Conference paper
Publications
35 results for Cheng-Wei Cheng
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Conference paperVertical thinking in blue light emitting diodes: GaN-on-graphene technology
- Can Bayram
- Jeehwan Kim
- et al.
- 2015
- SPIE OPTO 2015
Conference paperPolarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
- Can Bayram
- John A. Ott
- et al.
- 2015
- SPIE OPTO 2015
Conference paperA four-FET method for extracting mobility in FETs without field oxide
- Amlan Majumdar
- Ko-Tao Lee
- et al.
- 2014
- IEEE T-ED
PaperCMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
PaperPrinciple of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
- Jeehwan Kim
- Can Bayram
- et al.
- 2014
- Nature Communications
PaperTowards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
PaperCubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy
- Can Bayram
- John A. Ott
- et al.
- 2014
- Advanced Functional Materials
PaperSelf-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Conference paper