Interface states induced by the presence of trapped holes near the silicon-silicon-dioxide interfaceD.J. DiMariaD.A. Buchananet al.1995Journal of Applied PhysicsPaper
Anomalous positive charge formation by atomic hydrogen exposureR.E. StahlbushE. Cartieret al.1995Microelectronic EngineeringPaper
Interface Defect Formation in MOSFETs by Atomic Hydrogen ExposureR.E. StahlbushE. Cartier1994IEEE TNSPaper