A GexSe1-x switch-only-memory technology through polarized atomic distribution
- Zhi-Lun Liu
- Alexander Grun
- et al.
- 2024
- Scientific Reports
Paper
Publications
12 results for I. Kuo
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Conference paperEndurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- W. Chien
- Lynne Gignac
- et al.
- 2022
- IRPS 2022
Conference paperDevice Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
- W. Chien
- Lynne Gignac
- et al.
- 2022
- EDTM 2022
Conference paperSi Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- Huai-Yu Cheng
- I. Kuo
- et al.
- 2020
- VLSI Technology 2020
Conference paperA no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM
- Nanbo Gong
- W. Chien
- et al.
- 2020
- VLSI Technology 2020
Conference paperComprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications
- W. Chien
- H. Ho
- et al.
- 2019
- VLSI Technology 2019
Conference paperSuperb endurance and appropriate Vth of PCM pillar cell using buffer layer for 3D cross-point memory
- N. Gang
- W. Chien
- et al.
- 2019
- IMW 2019
Conference paperSolution for PCM and OTS intermixing on cross-point phase change memory
- W. Chien
- Lynne Gignac
- et al.
- 2019
- IMW 2019
Conference paperA study on OTS-PCM pillar cell for 3-d stackable memory
- W. Chien
- C. Yeh
- et al.
- 2018
- IEEE T-ED
Paper