Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- Huai-Yu Cheng
- I. Kuo
- et al.
- 2020
- VLSI Technology 2020
Conference paper
Publications
16 results for M. H. Lee
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
Conference paperA Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2017
- IEEE JSSC
PaperA Retention-Aware multilevel cell phase change memory program evaluation metric
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- IEEE Electron Device Letters
PaperA resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- ISSCC 2016
Conference paperGreater than 2-bits/cell MLC storage for ultra high density phase change memory using a novel sensing scheme
- Jau-Yi Wu
- Win-San Khwa
- et al.
- 2015
- VLSI Technology 2015
Conference paperA Procedure to Reduce Cell Variation in Phase Change Memory for Improving Multi-Level-Cell Performances
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2015
- IMW 2015
Conference paperA novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
Conference paperSearching for the optimal materials for phase change random access memories
- Ming-Hsiu Lee
- Simone Raoux
- et al.
- 2012
- ICSICT 2012
Conference paperOptimization of programming current on endurance of phase change memory
- Sangbum Kim
- Pei-Ying Du
- et al.
- 2012
- VLSI-TSA 2012
Conference paper