First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache Applications
- H. Wu
- V. Katragadda
- et al.
- 2021
- IEDM 2021
Conference paper
Publications
147 results for Daniel Edelstein
Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect
- T. Nogami
- S. Nguyen
- et al.
- 2021
- IEDM 2021
Conference paperDual Damascene BEOL Extendibility With Cu Reflow / Selective TaN And Co/Cu Composite
- P. Bhosale
- N. Lanzillo
- et al.
- 2021
- VLSI Technology 2021
Conference paperA 14 nm embedded STT-MRAM CMOS technology
- Daniel C. Edelstein
- M. Rizzolo
- et al.
- 2020
- IEDM 2020
Conference paperRole of high aspect-ratio thin-film metal deposition in Cu back-end-of-line technology
- Andrew Simon
- O. Van Der Straten
- et al.
- 2020
- JVSTA
PaperStructural and transport properties of Cu/Ta(N)/Cu interfaces in vertical interconnects
- Nicholas A. Lanzillo
- Lawrence Clevenger
- et al.
- 2020
- Journal of Applied Physics
PaperTechnology challenges and enablers to extend Cu metallization to beyond 7 nm node
- Takeshi Nogami
- H. Huang
- et al.
- 2019
- VLSI Technology 2019
Conference paperKey parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017
Conference paper20 Years of Cu BEOL in manufacturing, and its future prospects
- Daniel C. Edelstein
- 2017
- IEDM 2017
Conference paperLine Resistance Reduction in Advanced Copper Interconnects
- Chih-Chao Yang
- T. Standaert
- et al.
- 2017
- IEEE Electron Device Letters
Paper