Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Conference paper
Publications
147 results for Daniel Edelstein
Microstructure modulation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2017
- IITC 2017
Conference paperReliable airgap BEOL technology in advanced 48 nm pitch copper/ULK interconnects for substantial power and performance benefits
- C. J. Penny
- S. Gates
- et al.
- 2017
- IITC 2017
Conference paperMethods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond
- Xunyuan Zhang
- Huai Huang
- et al.
- 2017
- IITC 2017
Conference paperCobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
- Takeshi Nogami
- Raghuveer Patlolla
- et al.
- 2017
- IITC 2017
Conference paperVia resistance reduction in advanced copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2017
- IEEE Electron Device Letters
PaperRuthenium interconnect resistivity and reliability at 48 nm pitch
- Xunyuan Zhang
- Huai Huang
- et al.
- 2016
- IITC/AMC 2016
Conference paperPre-liner dielectric nitridation for resistance reduction in copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2016
- IITC/AMC 2016
Conference paperPost porosity plasma protection integration at 48 nm pitch
- H. Huang
- Krystelle Lionti
- et al.
- 2016
- IITC/AMC 2016
Conference paperBEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
Conference paper