Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2013
- Microelectronic Engineering
Paper
Publications
147 results for Daniel Edelstein
Materials and scaling effects on on-chip interconnect reliability
- C.-K. Hu
- E. Liniger
- et al.
- 2013
- MRS Spring Meeting 2013
Conference paperX-ray characterization of PEALD versus PVD tantalum nitride barrier deposition and the impact on via contact resistance
- Xunyuan Zhang
- Oscar Van der Straten
- et al.
- 2013
- ECS Transactions
Conference paperElectrodeposited Cu film morphology on thin PVD Cu seed layers
- James J. Kelly
- X. Lin
- et al.
- 2013
- ECS Transactions
Conference paperInvasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion
- Fen Chen
- Michael Shinosky
- et al.
- 2012
- Applied Physics Letters
PaperElectromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals
- Takeshi Nogami
- C. Penny
- et al.
- 2012
- IEDM 2012
Conference paperExperimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- Fen Chen
- Jeffrey Gambino
- et al.
- 2012
- IRPS 2012
Conference paperIn-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects
- Chih-Chao Yang
- Fen Chen
- et al.
- 2012
- IITC 2012
Conference paperEffects of metal capping on thermal annealing of copper interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
PaperElectromigration in Cu(Al) and Cu(Mn) damascene lines
- C.-K. Hu
- J. Ohm
- et al.
- 2012
- Journal of Applied Physics
Paper