SMT and enhanced SPT with Recessed SD to improve CMOS Device PerformanceS. FangS.S. Tanet al.2008ICSICT 2008Conference paper
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithographyS. NarasimhaK. Onishiet al.2006IEDM 2006Conference paper
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyondX. ChenS. Fanget al.2006VLSI Technology 2006Conference paper
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cellE. LeobandungH. Nayakamaet al.2005VLSI Technology 2005Conference paper
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturingH.S. YangR. Maliket al.2004IEDM 2004Conference paper