Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
Conference paper
Publications
154 results for Robert M. Shelby
Highly scalable novel access device based on Mixed Ionic Electronic Conduction (MIEC) materials for high density phase change memory (PCM) arrays
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- R.S. Shenoy
- et al.
- 2010
- VLSI Technology 2010
Conference paperAmorphization of crystalline phase change material by ion implantation
- Simone Raoux
- Guy M. Cohen
- et al.
- 2010
- MRS Online Proceedings Library
Conference paperObservation of the role of subcritical nuclei in crystallization of a glassy solid
- Bong-Sub Lee
- Geoffrey W. Burr
- et al.
- 2009
- Science
PaperCharacterization of phase change memory materials using phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2009
- Journal of Applied Physics
PaperCrystallization dynamics of nitrogen-doped Ge2Sb 2Te5
- Robert M. Shelby
- Simone Raoux
- 2009
- Journal of Applied Physics
PaperPhase change materials and their application to random access memory technology
- Simone Raoux
- Robert M. Shelby
- et al.
- 2008
- Microelectronic Engineering
PaperPhase-change random access memory: A scalable technology
- Simone Raoux
- Geoffrey W. Burr
- et al.
- 2008
- IBM J. Res. Dev
PaperSET characteristics of phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2008
- MRS Spring Meeting 2008
Conference paperSolution-phase deposition and nanopatterning of GeSbSe phase-change materials
- Delia J. Milliron
- Simone Raoux
- et al.
- 2007
- Nature Materials
Paper