High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Conference paper
Publications
25 results for Yanning Sun
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
Conference paperHigh-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014
Conference paperCMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
PaperSelf-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
Conference paperWafer-scale graphene integrated circuit
- Yu-Ming Lin
- Alberto Valdes-Garcia
- et al.
- 2011
- Science
PaperChannel-length-dependent transport behaviors of graphene field-effect transistors
- Shu-Jen Han
- Zhihong Chen
- et al.
- 2011
- IEEE Electron Device Letters
PaperIII-V: Replacing Si or more than moore?
- Yanning Sun
- 2010
- VLSI Technology 2010
Conference paperStudy of channel length scaling in large-scale graphene FETs
- Shu-Jen Han
- Yanning Sun
- et al.
- 2010
- VLSI Technology 2010
Conference paperImprove variability in carbon nanotube FETs by scaling
- Yanning Sun
- George Tuleski
- et al.
- 2010
- DRC 2010
Conference paper