DSA patterning options for logics and memory applications
- Chi Chun Liu
- Elliott Franke
- et al.
- 2017
- SPIE Advanced Lithography 2017
Conference paper
Publications
57 results for Matthew Colburn
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Conference paperDesign technology co-optimization assessment for directed self-Assembly-based lithography: Design for directed self-Assembly or directed self-Assembly for design
- Kafai Lai
- Chi Chun Liu
- et al.
- 2017
- J. Micro/Nanolithogr. MEMS MOEMS
PaperFINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Conference paperBEOL process integration for the 7 nm technology node
- T. Standaert
- Genevieve Beique
- et al.
- 2016
- IITC/AMC 2016
Conference paperLithographic qualification of high-Transmission mask blank for 10nm node and beyond
- Yongan Xu
- Tom Faure
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperDSA patterning options for FinFET formation at 7nm node
- Chi Chun Liu
- Elliott Franke
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperThermomechanical behavior of EUV pellicle under dynamic exposure conditions
- Dario Goldfarb
- Max O. Bloomfield
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperComparison of left and right side line edge roughness in lithography
- Lei Sun
- Nicole Saulnier
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paperDSA via hole shrink for advanced node applications
- Cheng Chi
- Chi Chun Liu
- et al.
- 2016
- SPIE Advanced Lithography 2016
Conference paper