High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology
- Davood Shahrjerdi
- Stephen W. Bedell
- et al.
- 2012
- Applied Physics Letters
Paper
Publications
103 results for Stephen W. Bedell
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Conference paperLow-temperature epitaxy of compressively strained silicon directly on silicon substrates
- Davood Shahrjerdi
- Bahman Hekmatshoar
- et al.
- 2011
- Journal of Electronic Materials
PaperNew opportunities for SiGe and Ge channel p-FETs
- S.W. Bedell
- N. Daval
- et al.
- 2011
- Microelectronic Engineering
PaperImproved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2011
- Applied Physics Letters
PaperRole of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates
- Stephen W. Bedell
- Thomas N. Adam
- et al.
- 2011
- Journal of Crystal Growth
PaperLow-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- Journal of Crystal Growth
PaperCMOS-integrated high-speed MSM germanium waveguide photodetector
- Solomon Assefa
- Fengnian Xia
- et al.
- 2010
- Optics Express
PaperApplications of epitaxy for semiconductor technology
- Devendra Sadana
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Conference paper> 1020 cm-3 n-doping in Ge by Sb/P co-implants: n+/p Diodes with improved rectification
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Conference paper