High Performance Nanosheet Technology Optimized for 77 K
- R. Bao
- L. Qin
- et al.
- 2023
- IEDM 2023
Conference paper
Publications
32 results for Ruqiang Bao
SiGe Gate-All-around Nanosheet Reliability
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2022
- IRPS 2022
Conference paperCritical Elements for Next Generation High Performance Computing Nanosheet Technology
- R. Bao
- C. Durfee
- et al.
- 2021
- IEDM 2021
Conference paperChallenges and Opportunities for Stacked Transistor: DTCO and Device
- J. Wang
- S.D. Suk
- et al.
- 2021
- VLSI Technology 2021
Conference paperEnabling Next Generation CMOS by Novel EOT Scaling Module
- Lin Dong
- Steven Hung
- et al.
- 2021
- VLSI Technology 2021
Conference paperTDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021
Conference paperSelective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- Ruqiang Bao
- K. Watanabe
- et al.
- 2020
- VLSI Technology 2020
Conference paperNBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2020
- IRPS 2020
Conference paperUltra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
- John Rozen
- K. Suu
- et al.
- 2019
- IEDM 2019
Conference paperFull Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications
- J. Zhang
- S. Pancharatnam
- et al.
- 2019
- IEDM 2019
Conference paper