High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition
- Hong He
- Paul Brabant
- et al.
- 2012
- Thin Solid Films
Paper
Publications
39 results for Thomas Adam
Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
- Manabu Shinriki
- Keith Chung
- et al.
- 2012
- Thin Solid Films
PaperScalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
PaperETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
Conference paperETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Conference paperHigh-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
PaperRole of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates
- Stephen W. Bedell
- Thomas N. Adam
- et al.
- 2011
- Journal of Crystal Growth
PaperExtremely thin SOI (ETSOI) technology: Past, present, and future
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2010
- IEEE International SOI Conference 2010
Conference paperLow-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- Journal of Crystal Growth
PaperChallenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2010
- VLSI-TSA 2010
Conference paper