3D copper TSV integration, testing and reliability
- Mukta Farooq
- T. Graves-Abe
- et al.
- 2011
- IEDM 2011
Conference paper
Publications
41 results for F. Chen
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
Conference paperCo capping layers for Cu/low-k interconnects
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- ADMETA 2010
Conference paperHigh reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Conference paperCoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Conference paperA comparative study of ULK conduction mechanisms and TDDB characteristics for Cu interconnects with and without CoWP metal cap at 32nm technology
- F. Chen
- E. Huang
- et al.
- 2010
- IITC 2010
Conference paperCharacterization of selectively deposited cobalt capping layers: Selectivity and electromigration resistance
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- IEEE Electron Device Letters
PaperEnhanced via integration process for copper/ultralow-κ interconnects
- C.-C. Yang
- F. Chen
- et al.
- 2010
- IEEE Electron Device Letters
PaperCritical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
Conference paperMaterial and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Conference paper