Line edge roughness and spacing effect on low-k TDDB characteristics
- F. Chen
- J.R. Lloyd
- et al.
- 2008
- IRPS 2008
Conference paper
Publications
41 results for F. Chen
Reliability of Cu interconnects with Ta implant
- J.P. Gambino
- T.D. Sullivan
- et al.
- 2007
- IITC 2007
Conference paperImproved electromigration lifetime for copper interconnects using tantalum implant
- Jeff Gambino
- Timothy D. Sullivan
- et al.
- 2007
- MRS Spring Meeting 2007
Conference paperA comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development
- F. Chen
- O. Bravo
- et al.
- 2006
- IRPS 2006
Conference paperA 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Conference paper65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Conference paperPECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Conference paperBEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrules
- S. Lane
- M. Fukasawa
- et al.
- 2005
- AMC 2005
Conference paperA SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications
- Matthew Angyal
- Jason Gill
- et al.
- 2005
- AMC 2005
Conference paperDetermination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structures
- F. Chen
- J. Gill
- et al.
- 2006
- Microelectronics Reliability
Paper