Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer
- Rajas Mathkari
- Maximilian Liehr
- et al.
- 2025
- Materials Science in Semiconductor Processing
Paper
Publications
20 results for Nanbo Gong
Analog Resistive Switching Devices for Training Deep Neural Networks with the Novel Tiki-Taka Algorithm
- Tommaso Stecconi
- Valeria Bragaglia
- et al.
- 2024
- Nano Letters
PaperReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array
- Fabia Farlin Athena
- Nanbo Gong
- et al.
- 2023
- IEEE T-ED
PaperMaterial to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning
- Minhaz Abedin
- Nanbo Gong
- et al.
- 2023
- Scientific Reports
PaperA Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Conference paperNew Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Conference paperDeep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
- N. Gong
- Malte J. Rasch
- et al.
- 2022
- IEDM 2022
Conference paperEndurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- W. Chien
- Lynne Gignac
- et al.
- 2022
- IRPS 2022
Conference paperDevice Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
- W. Chien
- Lynne Gignac
- et al.
- 2022
- EDTM 2022
Conference paperMulti level cell (MLC) in 3D crosspoint phase change memory array
- Nanbo Gong
- 2021
- Science China Information Sciences
Paper