Publications

72 results for Stephen M. Gates

Decomposition mechanisms of SiH_x species on Si(100)-(2×1) for x=2, 3, and 4
- - S. Gates
  - C.M. Greenlief
  - et al.
- 1990
- The Journal of Chemical Physics
Paper
Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °C
- - S. Gates
  - C.M. Greenlief
  - et al.
- 1990
- The Journal of Chemical Physics
Paper
Absolute coverage and decomposition kinetics of Mono-, Di-, and tri-hydride phases on Si(111)-(7×7)
- - C.M. Greenlief
  - S. Gates
  - et al.
- 1989
- Chemical Physics Letters
Paper
Interaction of Si2H6 with a Si(111)-77 surface
- - R. Imbihl
  - J.E. Demuth
  - et al.
- 1989
- Physical Review B
Paper
Reactive sticking coefficient of silane on the Si(111)-(7×7) Surface
- - S. Gates
  - C.M. Greenlief
  - et al.
- 1989
- Chemical Physics Letters
Paper
Reaction kinetics of surface silicon hydrides
- - C. Michael Greenlief
  - Stephen M. Gates
  - et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Silicon hydride etch products from the reaction of atomic hydrogen with Si(100)
- - Stephen M. Gates
  - Roderick R. Kunz
  - et al.
- 1989
- Surface Science
Paper
Adsorption kinetics of SiH₄, Si₂H₆ and Si₃H₈ on the Si(111)-(7×7) surface
- - Stephen M. Gates
- 1988
- Surface Science
Paper
Summary Abstract’ Integrated system for studies of thln-film chemical growth processes on silicon wafers
- - M. Liehr
  - S. Gates
  - et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Summary Abstract: Chernisorption of silanes on the Si(111)-(7x7) surface
- - S. Gates
  - B.A. Scott
  - et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper