Epitaxial silicon and germanium on buried insulator heterostructures and devices
- N.A. Bojarczuk
- M. Copel
- et al.
- 2003
- Applied Physics Letters
Paper
Publications
37 results for Huiling Shang
Recent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
Conference paperElectrical characterization of germanium p-channel MOSFETs
- H. Shang
- H. Okorn-Schimdt
- et al.
- 2003
- IEEE Electron Device Letters
PaperCharacterization of ultralow voltage, fully depleted silicon on insulator CMOS device and circuit technology
- Huiling Shang
- Marvin H White
- et al.
- 2002
- Solid-State Electronics
PaperHigh mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Conference paper0.25 V FDSOI CMOS technology for ultra-low voltage applications
- Hulling Shang
- Marvin H. White
- et al.
- 2002
- IEEE International SOI Conference 2002
Conference paperInterface studies of tungsten gate metal-oxide-silicon capacitors
- Huiling Shang
- Marvin H. White
- et al.
- 2001
- Applied Physics Letters
Paper