0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
- C. Pei
- G. Wang
- et al.
- 2014
- IEDM 2014
Conference paper
Publications
33 results for X. Wang
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Conference paperHigh-κ gate dielectrics for nanoscale CMOS devices: Status, challenges, and future
- Dae-Gyu Park
- Xinlin Wang
- 2010
- ECS Transactions
Conference paperReverse temperature dependence of circuit performance in high- k/metal-gate technology
- Shu-Jen Han
- Dechao Guo
- et al.
- 2009
- IEEE Electron Device Letters
PaperFinFET resistance mitigation through design and process optimization
- Cindy Wang
- Josephine Chang
- et al.
- 2009
- VLSI-TSA 2009
Conference paperGate length and performance scaling of undoped-body extremely thin SOI MOSFETs
- Amlan Majumdar
- Xinlin Wang
- et al.
- 2009
- IEEE Electron Device Letters
PaperLow-k spacers for advanced low power CMOS devices with reduced parasitic capacitances
- Elbert Huang
- Eric Joseph
- et al.
- 2008
- IEEE International SOI Conference 2008
Conference paperGate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate
- K. Henson
- H. Bu
- et al.
- 2008
- IEDM 2008
Conference paperDevice scaling of high performance MOSFET with metal gate high-K at 32nm technology node and beyond
- Xinlin Wang
- Ghavam Shahidi
- et al.
- 2008
- SISPAD 2008
Conference paperOn the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages
- Shu-Jen Han
- Xinlin Wang
- et al.
- 2008
- IEDM 2008
Conference paper