Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Paper
Publications
49 results for P. Agnello
Conditions for an Oxide-Free Si Surface for Low-Temperature Processing: Steady-State Boundary
- P. Agnello
- T.O. Sedgwick
- 1992
- JES
PaperSilicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
PaperUse of electron-beam charging for in-process inspection of silicide complementary metal-oxide-semiconductor gate electrode isolation
- Keith A. Jenkins
- P. Agnello
- et al.
- 1992
- Applied Physics Letters
PaperAtmospheric pressure chemical vapor deposition of Si and SiGe at low temperatures
- T.O. Sedgwick
- P. Agnello
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperCharacterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
Conference paperSelective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
PaperHigh phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 1991
- Applied Physics Letters
PaperLow temperature selective epitaxial growth of silicon at atmospheric pressure in an ultra-clean system
- T.O. Sedgwick
- P. Agnello
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Conference paper