Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing
- M. Cai
- B. Greene
- et al.
- 2008
- IEEE International SOI Conference 2008
Conference paper
Publications
18 results for Brian Greene
SMT and enhanced SPT with Recessed SD to improve CMOS Device Performance
- S. Fang
- S.S. Tan
- et al.
- 2008
- ICSICT 2008
Conference paperHigh-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Conference paperRecent progress and challenges in enabling embedded Si:C technology
- B. Yang
- Z. Ren
- et al.
- 2008
- ECS Meeting 2008
Conference paper(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
Conference paperMechanism of solid phase crystallization of prepatterned nanoscale α-Si pillars
- Hyun-Jin Cho
- Brian J. Greene
- et al.
- 2007
- Journal of Applied Physics
PaperIntegration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Conference paperDesign of high performance PFETs with strained Si channel and laser anneal
- Z. Luo
- Y.F. Chong
- et al.
- 2005
- IEDM 2005
Conference paper