Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Conference paper
Publications
47 results for Leathen Shi
High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- M. Yang
- M. Ieong
- et al.
- 2003
- IEDM 2003
Conference paperHigh-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding
- D. Singh
- L.T. Shi
- et al.
- 2003
- Journal of Electronic Materials
PaperElectrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- K.W. Guarini
- A. Topol
- et al.
- 2002
- IEDM 2002
Conference paperExtreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Conference paperA 23.8-GHz SOI CMOS tuned amplifier
- Brian A. Floyd
- Leathen Shi
- et al.
- 2002
- IEEE T-MTT
PaperNew polysilicon disposable sidewall process for sub-50 nm CMOS
- K.L. Lee
- D. Boyd
- et al.
- 2001
- ESSDERC 2001
Conference paperHigh performance of planar double gate MOSFETs with thin backgate dielectrics
- E.C. Jones
- M. Ieong
- et al.
- 2001
- DRC 2001
Conference paperA 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider
- Matt Wetzel
- Leathen Shi
- et al.
- 2000
- IEEE Microwave and Guided Wave Letters
PaperVery high performance 50 nm CMOS at low temperature
- S.J. Wind
- L.T. Shi
- et al.
- 1999
- IEDM 1999
Conference paper