Facts and Myths of Dielectric Breakdown Processes-Part I: Statistics, Experimental, and Physical Acceleration Models
- Ernest Y. Wu
- 2019
- IEEE T-ED
Paper
Publications
64 results for Ernest Y. Wu
Recommended Methods to Study Resistive Switching Devices
- Mario Lanza
- H.-S. Philip Wong
- et al.
- 2018
- Advanced Electronic Materials
ReviewElapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2018
- IRPS 2018
Conference paperFundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)
- Ernest Y. Wu
- Andrew Kim
- et al.
- 2017
- IEDM 2017
Conference paperElectron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2017
- Journal of Applied Physics
PaperA stochastic model for impact of LER on BEOL TDDB
- Ramachandran Muralidhar
- Ernest Y. Wu
- et al.
- 2017
- IRPS 2017
Conference paperA new and holistic modelling approach for impact of line-edge roughness on dielectric reliability
- Ernest Y. Wu
- Ramachandran Muralidhar
- et al.
- 2017
- IRPS 2017
Conference paperComprehensive model for progressive breakdown in nFETs and pFETs
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2016
- IEDM 2016
Conference paperApplications of clustering model to bimodal distributions for dielectric breakdown
- Ernest Y. Wu
- Ronald Bolam
- et al.
- 2017
- JVSTB
PaperLayout dependence of gate dielectric TDDB in HKMG FinFET technology
- Wen Liu
- Ernest Y. Wu
- et al.
- 2016
- IRPS 2016
Conference paper