Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
Conference paper
Publications
64 results for Ernest Y. Wu
Recent advances in dielectric breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Sune
- 2013
- IIRW 2013
Conference paperModeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2013
- Applied Physics Letters
PaperImproving and optimizing reliability in future technologies with high-κ dielectrics
- Barry P. Linder
- Eduard Cartier
- et al.
- 2013
- VLSI-DAT 2013
Conference paperImproving and optimizing reliability in future technologies with high-κ dielectrics
- Barry P. Linder
- Eduard Cartier
- et al.
- 2013
- VLSI-TSA 2013
Conference paperA new formulation of breakdown model for high-κ/SiO2 stack dielectrics
- Ernest Y. Wu
- 2013
- IRPS 2013
Conference paperGeneralized hydrogen release-reaction model for the breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Suñé
- 2013
- Journal of Applied Physics
PaperTemperature dependence of TDDB voltage acceleration in high-κ/ SiO2 bilayers and SiO2 gate dielectrics
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IEDM 2012
Conference paperMin-log approach to modeling dielectric breakdown data
- Emmanuel Yashchin
- Baozhen Li
- et al.
- 2012
- IRPS 2012
Conference paperGeneralized successive failure methodology for non-Weibull distributions and its applications to SiO 2 or high-k/SiO 2 bilayer dielectrics and extrinsic failure mode
- Ernest Wu
- Jordi Suñé
- et al.
- 2012
- IRPS 2012
Conference paper